3 edition of Indium phosphide solar cells found in the catalog.
Indium phosphide solar cells
by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC], [Springfield, Va
Written in English
|Statement||Irving Weinberg and David J. Brinker|
|Series||NASA technical memorandum -- 87315|
|Contributions||Brinker, David J, United States. National Aeronautics and Space Administration|
|The Physical Object|
Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1[times]10[sup 16] electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection :// Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an :// 1J/abstract.
Indium phosphide is used to make semiconductors,injection lasers, solar cells, photodiodes, and light-emittingdiodes. Indium phosphide was nominated for study because of its widespread use in the microelectronics industry, the potential for worker exposure,and the absence of chronic toxicity data. M In book: Encyclopedia of Materials: Science and Technology, Edition: 1, Chapter: Indium Gallium Arsenide Phosphide, Publisher: Elsevier, pp - Cite this publication Thomas Pearsall
Alta Devices, of Sunnyvale, Calif., which makes solar cells for unmanned aerial vehicles, announced in April that a dual-junction device made of gallium-arsenide and indium-gallium-phosphide had from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for ://
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Indium phosphide solar cells Abstract: The ideal solar cells for Indium phosphide solar cells book in space have a high power to mass ratio and a high resistance to radiation. To date, flat panels using cells based on single crystal silicon or gallium arsenide have been used on space flights, although development programmes have considered the use of cells based on other Herein, through delicately designing and engineering the van der Waals heterostructure between graphene and indium phosphide (InP), which has a suitable bandgap of eV for solar energy conversion, we have achieved graphene/p-InP solar cells with power conversion efficiency (PCE) of % under AM G :// Compared with the widely used Si, indium phosphide (InP) has a direct bandgap of eV, which locates at the optimum energy range for solar energy conversion.
InP is a promising material for high conversion efficiency solar cells, including InP-based homojunction and heterojunction solar :// Here we use a coupled optical and electrical model to study the performance of heterojunction Si (HJSi) solar cells based on gallium phosphide (GaP)/crystalline Silicon (c-Si) structures in comparison with Si (c-Si)/amorphous Si (a-Si) HIT solar :// INDIUM PHOSPHIDE SOLAR CELLS - STATUS AND PROSPECTS FOR USE IN SPACE Irving Weinberg and David J.
Brinker National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio ABSTRACT The current status of indium phosphide cell research is reviewed and state of the art efficien-cies compared to those of GaAs and is Solar cells are, in their simplest form, large area p-n junctions.
Light falls upon the upper surface, is absorbed, and generates electron-hole pairs which are separated by the electric field associated with the depletion region. Pulko, N. Pearsall, and A.
Hurst "Simulation of the indium-phosphide-based solar cell", Proc. SPIE Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum.
Here we enhance the absorption in indium phosphide (InP Gallium indium phosphide is a "ternary" compound, in which two elements from group III are alloyed with one from group V. It was Berkeley Lab's investigation of a related ternary compound that opened startling new possibilities for multijunction solar :// Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer.
Vidur Raj 1,5, Tâmara Sibele dos Santos 1, Fiacre Rougieux 2, Kaushal Vora 3, Mykhaylo Lysevych 3, Lan Fu 1, Sudha Mokkapati 4, Hark Hoe Tan 1,5 and Chennupati Jagadish 1. For p-i-n solar cells, the density of interface defects was set to zero as we An illustration of an open book.
Books. An illustration of two cells of a film strip. Video. An illustration of an audio speaker. Audio An illustration of a " floppy disk. Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer The absorption of indium phosphide particles ( um in diameter) following admin by oral gavage or ip injection of single doses of 0, 1, 3, or 5, mg/kg indium phosphide to male ICR mice, which were observed for up to 14 days /was evaluated/.
Indium phosphide/cadmium sulfide solar cells with AM2 efficiencies up to 7% were prepared by the deposition of CdS on single crystals of InP. When an intermediate layer of n-type InP was deposited by the planar reactive deposition (PRD) technique, 3% efficiencies were :// Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the Indium gallium phosphide (InGaP) is a semiconductor composed of indium, gallium and is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space Pro-duction cells are discussed including their intended use to power a spacecraft scheduled for launch in Citation Download Citation.
Weinberg, D. Brinker, C. Swartz, and R. Hart Jr. "Progress In Indium Phosphide Solar Cell Research", Proc. SPIE1st Intl Conf on Indium Phosphide and Related Materials for Advanced Modeling of a gallium phosphide/silicon heterojunction solar cells Pietro Luppina, Stuart Bowden, Paolo Lugli, Stephen Goodnick GIOS: Sustainability Initiative study the fundamental physics of solar cells based on the nearly ideal solar material indium phosphide(InP).
ii) to demonstrate the feasibility of sputter deposition of n-type window layers in connection with our programme on all sputtered CdS/Cu 2 S :// Using D-HVPE, the NREL made solar cells from gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with the latter working as a “window layer” to passivate the front while permitting Indium Phosphide Solar Cells for Laser Power Beaming Applications Lasers can be used to transmit power to photovoltaic cells.
Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very Solar cells prepared from these films exhibit relatively good short-circuit current density, up to 15 mA/cm/sup 2/, but their conversion efficiencies are severely limited by the high series.
Indium phosphide (InP) solar cells have demonstrated better radiation resistance than gallium arsenide (GaAs) and silicon (Si) cells (refs. 1 and 2), but the high cost of InP wafers inhibits their use for large space power applications.
The cost could be reduced by developing high-efficiency heteroepitaxial InP solar cells on lower cost :// We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface.
NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching.
We find that the postgrowth piranha etching is critical for obtaining a good solar cell Indium tin oxide and indium phosphide heterojunction nanowire array solar cells Masatoshi Yoshimura,1,a) Eiji Nakai,1 Katsuhiro Tomioka,1,2 and Takashi Fukui1 1Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo –, Japan